DRAM Replacement Coming in 2018


DRAM (Dynamic random-access memory) is the standard in today’s computers, smartphones and tablets, and over the years the ICs used on the memory have been increasing in capacity and speed while consuming less power. DDR4 is expected to take the desktop DRAM memory type even further in that direction, but researchers are working on a new memory that has one-third the power consumption of DRAM with 10 times the capacity, 10 times the writing speed and it can be used in any portable or storage device.

The new memory is expected to hit the market in 2018 and is called magnetoresistive random access memory, or MRAM. With this new memory type data is stored by means of magnetic storage elements instead of as electric charges or current flows – allowing the power consumption to be dramatically decreased and there is very little write degradation as is the case with flash RAM.


MRAM technology are, compared with conventional memory, still in the early days of commercialization, proponents of MRAM believe this technology offers an attractive combination of faster operation, reduced power consumption and, unlike flash RAM that can degrade when it is written to repeatedly, the potential for an indefinitely long life without degradation. Furthermore, while static random-access memory (SRAM), dynamic random-access memory (DRAM), electrically erasable programmable read-only memory (EEPROM) and flash memory all have slightly different characteristics, it is thought that MRAM could potentially replace all of these diverse types.

You can read more about MRAM here: http://www.engineerlive.com/content/24242